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    IGeeKphone China Phone, Tablet PC, VR, RC Drone News, Reviews
    You are at:Home»NEWS»Samsung unveils its first 36GB HBM3E 12H DRAM: 12-layer stack with another capacity breakthrough
    NEWS

    Samsung unveils its first 36GB HBM3E 12H DRAM: 12-layer stack with another capacity breakthrough

    Brady CottonBy Brady CottonFebruary 27, 2024
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    Igeekphone, February 27 news, Samsung Electronics today officially announced the release of its first 12-layer stacked HBM3E DRAM – HBM3E 12H, which is Samsung’s largest capacity HBM product so far.

    The Samsung HBM3E 12H supports a maximum bandwidth of 1280GB/s around the clock and a product capacity of 36GB. Compared to Samsung’s 8-layer stacked HBM3 8H, the HBM3E 12H improves bandwidth and capacity by more than 50%.0

    “There is a growing demand for higher capacity HBM from AI service providers in the current industry, and our new product HBM3E 12H is designed to meet this demand.” Yongcheol Bae, Executive Vice President, Memory Product Planning Team, Samsung Electronics, said, “This new storage solution is part of our efforts to develop the core technology of multi-layer stacked HBM and provide technological leadership to the high-capacity HBM market in the era of artificial intelligence.”

    The HBM3E 12H uses hot-pressed non-conductive film (TC NCF) technology to maintain the same height of 12-layer and 8-layer stacked products to meet the requirements of current HBM packaging. Because the industry is looking to mitigate chip bending from thin sheets, this technology will bring more benefits in higher stacks. Samsung has been working to reduce the thickness of its non-conductive thin film (NCF) material and achieve a minimum gap between chips to 7 micrometers (µm), while eliminating the gaps between layers. These efforts have resulted in an increase of more than 20% in the vertical density of its HBM3E 12H products compared to its HBM3 8H products.

    Samsung’s Hot Pressed Non-conductive Film (TC NCF) technology also improves the thermal performance of HBM by allowing different sized bumps (bumps) to be used between chips. During chip bonding, the smaller bumps are used in the signal transmission area, while the larger bumps are placed in the area where heat dissipation is required. This method helps to improve the yield of the product.

    Samsung Electronics said that when the HBM3E 12H is equipped with artificial intelligence applications, the average speed of artificial intelligence training is expected to increase by 34 percent compared to the HBM38H, and the number of inference service users can increase by more than 11.5 times.

    Igeekphone learned from the official press release that Samsung has begun to provide customers with samples of the HBM3E 12H, which is expected to start mass production in the second half of this year.

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