The Exynos processor division of Samsung continues to seek to distance itself from Qualcomm, the current leader in the mobile platform sector, creating increasingly powerful and efficient chips that are capable of competing with their California counterparts.
Today, the Korean giant has officially launched the Exynos 9610. The new Exynos 7 Series 9610 AP is manufactured in Samsung’s 10nm FinFET process technology. Samsung’s mid-range SoC Exynos 9610 features deep learning and advanced image processing designed to enhance picture quality for photos and video in smartphones.
Neural Network Engine (NPU) and Deep Learning
The Forming Engine in the Exynos 9610 also features a neural processor unit (NPU) that supports the Samsung processor, for example, with the help of deep learning and the capabilities of an artificial neural network and special algorithms for machine learning even faster and more accurate people and Recognize faces in shooting situations.
480 FPS slow motion in Full HD
The Exynos 9610 provides slow-motion capture at up to 480 frames per second in Full HD resolution, thanks to an improved Integrated Image Processor (ISP). The support for slow motion recording at 480 fps is also given for camera modules with two-layer image sensors (two-stack), according to Samsung. Video recordings are supported on the codec side with up to 4K 120 fps.
The power of the new smartphone processor comes from eight cortex cores: 4x Cortex A73 with up to 2.3 GHz and 4x Cortex A53 with a maximum of 1.6 GHz. The graphics unit is an ARM Mali-G72 GPU. In addition, the Exynos 9610 has an integrated LTE modem Cat.12 3CA with up to 600 Mbit / s in the download. In the upstream, it is up to 150 Mbit / s (Cat.13 2CA). Support for WLAN 802.11ac, Bluetooth 5.0, an integrated FM radio as well as GNSS, GLONASS, BeiDou and Galileo complete the feature set of the Exynos 9610.
According to Samsung, the Exynos 9610, which belongs to the Exynos 7 series and the Mass production for the new smartphone processor Exynos 9610 is planned for the second half of 2018. It is manufactured in the space-saving 10nm FinFET process.
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