Igeekphone News, August 11th: According to the latest news, the Samsung Galaxy S26 Ultra will achieve a major leap in memory performance. Leaker Ice Universe revealed that this model will be equipped with Micron’s latest LPDDR5X memory, with a speed of up to 10.7 Gbps, a significant improvement compared to the 9.6 Gbps of the S25 Ultra.
This leap in memory speed is attributed to Micron’s 1γ (1-gamma) DRAM architecture, which has significantly improved power efficiency and multitasking capabilities compared to the previous generation’s 1β (1-beta) architecture. This means that when users are using their mobile phones, especially when running high-load tasks, they can enjoy a smoother performance experience without over-consuming battery power.
According to Igeekphone, although this speed increase may not be significant in daily use, in scenarios with extremely high requirements for memory bandwidth, such as large-scale games or multitasking switching, its advantages will be particularly prominent. This upgrade is undoubtedly a huge blessing for gamers and users who often need to run multiple applications simultaneously.
In addition, Samsung has been striving to enhance the artificial intelligence capabilities of its devices in recent years, and this RAM upgrade will play a key role in this process. The Galaxy S26 Ultra is also expected to be equipped with the Snapdragon 8 Elite 2 chip. Combined with the improvement of memory performance, the overall performance of this mobile phone will far exceed that of the previous generation models.